Lab Report on CE BJT Amplifier

Please solve it.

Why there is a difference between the value of a beta dc and the value of a beta ac in the diagram of output characteristics in transistor

........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration

circuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2

Using LTSpice, simulate the circuit below, use 2N3904 for the transistor. Part ! DC simulation: Measure VCE and Ic. Use .op for the simulation cmd. Remove all capacitors and input signals first. Part 2 AC simulation: Connect all capacitors now and apply an AC signal at the input with an amplitufe of 1mV and a frequency of 1kHz. Determine the Voltage gain of the circuit by dividing Vo with Vin. Show the output for both the DC and AC analysis. Take a screenshot of the circuit and the output voltages and waveforms. Paste in a word file, write your answers, then save as pdf. 50 kΩ Σ 20 0,5 ΚΩ wwwh 9 Vcc=20 V Ca=1 µF = Cc₂ Cg=50 μF 5.6 kn B=100 Ca IST • 3.3 ΚΩ 5 ΚΩΣ CE

Coonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V.  Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro.  Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltage

1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if Rg is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) Rc = 16 2 RB 1.2 k2 V. B - 40 100 µF Figure 1

Fill in the table VB VC VE Ic LE I8 fre IT gm 5V Consider the circuit given at the right. 600k 1.5k =0.7, Vauo, B=165) 100uF Vo 1k 100uF a) Perform DC analysis and calculate all VB =? VC:? branch currents, node voltages, and small signal parameters 3K VE=? Rout b) Draw a small-signal equivalent model n Vin Rin 400K c) Calculate Ri, Rout, and Ay=Vou/Vin -5V

The amplifier in the circuit below is driven by a signal generator v, with a small sine wave signal vhose average value is zero. Assume the transistor has a value of B-100, and V-26 mV. a. You need to design the circuit so that the de emitter current IE of the emitter resistor RE to establish the desired de emitter current. = 1 mA. Specify the value b. A de collector voltage of +5 volts is desired. Specify the value of the collector resistor Re to establish the desired de collector voltage. For this part assume that RL 5 K and the Early Effect needs to be considered. The transistor has a VA 100 Volts. Draw the ac small signal equivalent circuit model of the amplifier and determine its voltage gain. 91SV C. 2.5k MM do RE -15 V 84 Vout RL

Exercise 1:-

6) Consider the following multistage amplifier. Draw the corresponding small signal model. Label, Vin, Vo1 and Vo. Do NOT make any approximations. Do NOT perform small signal analysis with this model. Just draw the small signal model. Show your work! Vin Vcc malli Q1 Re1 Vo1 Vcc ww1. Rc2 Q2 Re2 Vo

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1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if RB is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) RC -16Ω RB 1.2 k2 B - 40 100 µF

Determine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.

Consider the circuit in Figure 2. The transistor has a parameter B that varies between 50 and 200. You want to know the operation of the circuit and the electrical variables at the end points. Calculate the following for B= 50 and B= 200. a) IE, VE and VB (Analysis in DC). b) The input resistance R." (Small signal analysis). c) The voltage gain VO/Vsing (Small signal analy). This 10 ΚΩ www o Rin 100 ΚΩ +3V +1₁ HH 1 ΚΩ 1₁ 1 ΚΩ