An NMOS transistor with V T N = 1 V has a drain current i D = 0.8 mA when υ G S = 3 V and υ D S = 4.5 V Calculate the drain current when: (a) υ G S = 2 V , υ D S = 4.5 V ; and (b) υ G S = 3 V , υ D S = 1 V . (Ans. (a) 0.2 mA (b) 0.6 mA)
An NMOS transistor with V T N = 1 V has a drain current i D = 0.8 mA when υ G S = 3 V and υ D S = 4.5 V Calculate the drain current when: (a) υ G S = 2 V , υ D S = 4.5 V ; and (b) υ G S = 3 V , υ D S = 1 V . (Ans. (a) 0.2 mA (b) 0.6 mA)
An NMOS transistor with
V
T
N
=
1
V
has a drain current
i
D
=
0.8
mA
when
υ
G
S
=
3
V
and
υ
D
S
=
4.5
V
Calculate the drain current when: (a)
υ
G
S
=
2
V
,
υ
D
S
=
4.5
V
; and (b)
υ
G
S
=
3
V
,
υ
D
S
=
1
V
. (Ans. (a) 0.2 mA (b) 0.6 mA)
(a)
Expert Solution
To determine
The value of drain current for the given conditions.
Answer to Problem 3.1EP
iD=0.2mA
Explanation of Solution
Given:
The value of drain current is iD=0.8mA when vGS=3V and vDS=4.5V .
VTN=1V
New vGS=2V,vDS=4.5V
Calculation:
Consider NMOS which is also called n-channel enhancement MOSFET and assuming that the transistor is biased in saturation region, that is, (vGS>vTN) , the drain current is given by
iD=Kn(vGS−VTN)2
The value of conduction parameter Kn is given by
Kn=iD(vGS−VTN)2Kn=0.8×10−3(3−1)2Kn=0.2mA/V2
As,
vDS(sat)=vGS−VTNvDS(sat)=2−1vDS(sat)=1V
Comparing vDS and vDS(sat)
vDS>vDS(sat)(∵4.5>1)
Therefore, the transistor is in saturation. Substituting the values in the equation,
iD=Kn(vGS−VTN)2iD=0.2×10−3(2−1)2iD=0.2mA
(b)
Expert Solution
To determine
The value of drain current for given values.
Answer to Problem 3.1EP
iD=0.6mA
Explanation of Solution
Given:
The value of drain current is iD=0.8mA when vGS=3V and vDS=4.5V .
VTN=1V
New vGS=3V,vDS=1V
Calculation:
As,
vDS(sat)=vGS−VTNvDS(sat)=3−1vDS(sat)=2V
Comparing vDS and vDS(sat)
vDS<vDS(sat)(∵1<2)
Therefore, the transistor is in non-saturation (vDS<vDS(sat))
Drain current is given by
iD=Kn[2(vGS−VTN)vDS−vDS2]
Substituting the values in the equation,
iD=0.2×10−3[2(3−1)1−12]iD=0.2×10−3[6−2−1]iD=0.6mA
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16
out of
O 400 milliAmpere
estion
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O 400 microAmpere
O4 microAmpere
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O Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
O Si diodes have wider temperature ranges and higher PIV than Ge diodes.
O Si diodes have lower PIV and wider temperature ranges than Ge diodes.
Ps
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hp
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