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Select the WRONG statement relating to the properties of DRAM memories. (Select the WRONG statement; the statements not selected should be true) O The bit line is kept at a voltage between high voltage and ground, during a WRITE operation. A DRAM row-read takes a long time, but once a row is read into a buffer, multiple back-to- back reads to the same row are much faster. O Unlike SRAM reads, DRAM reads are "destructive". O Memory locations not accessed for some time need to be refreshed periodically.

Select the WRONG statement relating to the properties of DRAM memories. (Select the WRONG statement; the statements not selected should be true) O The bit line is kept at a voltage between high voltage and ground, during a WRITE operation. A DRAM row-read takes a long time, but once a row is read into a buffer, multiple back-to- back reads to the same row are much faster. O Unlike SRAM reads, DRAM reads are "destructive". O Memory locations not accessed for some time need to be refreshed periodically.

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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Select the WRONG statement relating to the properties of DRAM memories. (Select the WRONG statement; the statements not selected should be true) The bit line is kept at a voltage between high voltage and ground, during a WRITE operation. A DRAM row-read takes a long time, but once a row is read into a buffer, multiple back-to- back reads to the same row are much faster. Unlike SRAM reads, DRAM reads are "destructive". Memory locations not accessed for some time need to be refreshed periodically.
Transcribed Image Text:Select the WRONG statement relating to the properties of DRAM memories. (Select the WRONG statement; the statements not selected should be true) The bit line is kept at a voltage between high voltage and ground, during a WRITE operation. A DRAM row-read takes a long time, but once a row is read into a buffer, multiple back-to- back reads to the same row are much faster. Unlike SRAM reads, DRAM reads are "destructive". Memory locations not accessed for some time need to be refreshed periodically.
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