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Question 14 For an NMOS FET to be operating in the linear region of the ID-VDS characteristic: Gate to drain voltage can be lower than VT O It is enough for gate to source voltage alone to exceed VT It is enough for gate to drain voltage alore to exceed VT O Both the gate to source voltage and the gate to drain voltage must exceed VT to have a continuous channel comprising of electrons thereby bridging the "Source" region and the "Drain" region Question 15 For an NMOS FET to be operating in the pinch off region of the ID-VDS characteristic: O gate to source voltage must be less than VT O Gate to drain voltage should exceed VT O The gate to source voltage at the "Source" end must exceed VT (threshold voltage) resulting in a channe at the "Source" end. The gate to drain voltage at the "Drain" end must be equal to or less than VT caus the channel to pinch off at the drain end.

Question 14 For an NMOS FET to be operating in the linear region of the ID-VDS characteristic: Gate to drain voltage can be lower than VT O It is enough for gate to source voltage alone to exceed VT It is enough for gate to drain voltage alore to exceed VT O Both the gate to source voltage and the gate to drain voltage must exceed VT to have a continuous channel comprising of electrons thereby bridging the "Source" region and the "Drain" region Question 15 For an NMOS FET to be operating in the pinch off region of the ID-VDS characteristic: O gate to source voltage must be less than VT O Gate to drain voltage should exceed VT O The gate to source voltage at the "Source" end must exceed VT (threshold voltage) resulting in a channe at the "Source" end. The gate to drain voltage at the "Drain" end must be equal to or less than VT caus the channel to pinch off at the drain end.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Question 14 For an NMOS FET to be operating in the linear region of the ID-VDS characteristic: Gate to drain voltage can be lower than VT It is enough for gate to source voltage alone to exceed VT O It is enough for gate to drain voltage alore to exceed VT O Both the gate to source voltage and the gate to drain voltage must exceed VT to have a continuous channel comprising of electrons thereby bridging the "Source" region and the "Drain" region Question 15 For an NMOS FET to be operating in the pinch off region of the ID-VDS characteristic: gate to source voltage must be less than VT O Gate to drain voltage should exceed VT O The gate to source voltage at the "Source" end must exceed VT (threshold voltage) resulting in a channel at the "Source" end. The gate to drain voltage at the "Drain" end must be equal to or less than VT causing the channel to pinch off at the drain end. Elections pdf
Transcribed Image Text:Question 14 For an NMOS FET to be operating in the linear region of the ID-VDS characteristic: Gate to drain voltage can be lower than VT It is enough for gate to source voltage alone to exceed VT O It is enough for gate to drain voltage alore to exceed VT O Both the gate to source voltage and the gate to drain voltage must exceed VT to have a continuous channel comprising of electrons thereby bridging the "Source" region and the "Drain" region Question 15 For an NMOS FET to be operating in the pinch off region of the ID-VDS characteristic: gate to source voltage must be less than VT O Gate to drain voltage should exceed VT O The gate to source voltage at the "Source" end must exceed VT (threshold voltage) resulting in a channel at the "Source" end. The gate to drain voltage at the "Drain" end must be equal to or less than VT causing the channel to pinch off at the drain end. Elections pdf
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