Find the hall coefficient of a silicon material used in a Hall generator with a gap distance is 2.0 cm. When a current of 300 A flows, the hall voltage is recorded as 10 V and a magnetic flux density of 0.2 T is produced. Lütfen birini seçin: a. 0.0461 b. 0.0074 c. 0.0695 d. 3.3333 e. 0.0033

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
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ISBN:9781337399128
Author:Russell E. Smith
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Chapter12: Electronic Control Devices
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Find the hall coefficient of a silicon material used in a Hall generator with a gap distance is 2.0 cm. When a current of 300 A flows, the hall voltage is recorded as 10 V
and a magnetic flux density of 0.2 T is produced.
Lütfen birini seçin:
a. 0.0461
b. 0.0074
c. 0.0695
d. 3.3333
e. 0.0033
Transcribed Image Text:Find the hall coefficient of a silicon material used in a Hall generator with a gap distance is 2.0 cm. When a current of 300 A flows, the hall voltage is recorded as 10 V and a magnetic flux density of 0.2 T is produced. Lütfen birini seçin: a. 0.0461 b. 0.0074 c. 0.0695 d. 3.3333 e. 0.0033
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