6 6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltageof 25V.(a) calculate the electric field in the intrinsic layer.(b) Cal ate the electron drift(c) Calculate the hole drift time.Carrier drift velocity (cm/s)10%10710610510²GaAs (electrons)THULL10³T= 300 K- ElectronsHoles104Electric field (V/cm)10510⁰

Answered: Image /qna-images/answer/5f12365d-f8b1-4668-9d26-eccf4209b3a2.jpg

6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltage of 25V. (a) calculate the electric field in the intrinsic layer. (b) Calculate electron drift time. (c) Calculate the hole drift time. Carrier drift velocity (cm/s) 10% 107 10 105 10² GaAs (electrons) 10³ = 300 K - Electrons --Holes 10² Electric field (V/cm) 105 106

6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltage of 25V. (a) calculate the electric field in the intrinsic layer. (b) Calculate electron drift time. (c) Calculate the hole drift time. Carrier drift velocity (cm/s) 10% 107 10 105 10² GaAs (electrons) 10³ = 300 K - Electrons --Holes 10² Electric field (V/cm) 105 106

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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