Answered: The doping profile of a bar of Si is…

The doping profile of a bar of Si is N,(x) = Noe¬×/ª at 300 K. Given that No = 1014 cm³, r, = 80 ns, µn = 1420 cm³/Vs and 2= 50 µm, calculate the diffusion electron current at x = 10 µm.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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HVDC

HVDC stands for high voltage direct current in the electric power transmission system. The high voltage direct current system uses direct current (DC) for the transmission of electrical power through transmission lines in contrast with the alternating current that is the AC system. The HVDC is used to transmit bulk power point-to-point through long distances transmission lines. Power is rapidly transferred because the efficiency of transmission lines is greatly increased over long distances due to HVDC lines.

Question

Transcribed Image Text:(b) The doping profile of a bar of Si is Np(x) = Noe¬*/2 at 300 K. Given that No = 1014 cm³, T, = 80 ns, µn = 1420 cm³/Vs and 2 = 50 µm, calculate the diffusion electron current at x = 10 µm.

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