Silicon atoms with a concentration of 7× 1010 cm-3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?
Silicon atoms with a concentration of 7× 1010 cm-3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?
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Transcribed Image Text:Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T = 300 K:
N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The electron concentration ?
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