Set leic Use exact analysis. Calculate ica MA Use approximate analysis Calculate icar MA
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- Give the meaning of each acronym of solid state devices. Also sketch the schematic symbol for each device. SUS Shockley diode D-MOSFET JFET SCR DIAC THYRISTOR Device TRIAC 1. 3. 4. 6. 8. 10. 12. 14. Symbol 2. 5. 7. 9. 11. 13. 15. Meaning No entryFor Fixed Bias Configuration Solve for Ib, Ic and le. Atleast 2 decimal place. Be mindful of units. Assume Ic is not equal to le. ... 4 RC 15002 RB VCC 20V 90A/A 100k2 Ib=Blank 1 HA Ic=Blank 2mA le=Blank 3 mA Blank 1 Add your answer Blank 2 Add your answer Blank 3 Add your answerFor Fixed Bias Configuration Solve for Ib, Ic and le. Atleast 2 decimal place. Be mindful of units. Assume Ic is not equal to le. 4 RC 15002 RB VCC 20V 90A/A 100k2
- Q. Define m00 re riachiné.. MOo DAw the State diagream of 1011 wi thout overlaPpingFAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…For self bias configuration. Solve for Ib and Ic. ... 4 RC 15002 RB VCC 5 16V 100A/A 80 kQ Re 10002 Ib=Blank 1 HA Ic=Blank 2mA
- Question 15 In half wave rectifier with filter, if the capacitance is increased, the ripple factor increases. True False Moving to another question will save this response. ipIn a rectifier circuit , DC output voltage and RMS output voltage is 0.3 V & 0.55 V respectively. The form factor of this circuit is a. 3.67 b. 0.55 c. 1.35 d. 1.83In the circuit shown below. Determine the following a. Vs (at the secondary) b. Vout (across RL) c. Vrip (ripple votage) d. VDC e. PIV (Peak Inverse Voltage) 10:1 Output 115 V mis 60 Hz RL 2.2 k) D, 50μF- All diodes are IN4001. Tund AlMannai EENG261 Page 5/11
- Determine the following for the fixed- biased configuration. (Use 4 decimal places) a. IBQ and ICQ b. VCEQ c. VB , VC and VBCe+ VBB = 12Y. 50k VE RBB- 5Kd 7= 0.6 ATEM F 50052 Ip= 1OUA. GND DETERMINE: A) RB1 B) RB2 C) Vp D) VR2, DURING THE CHARGING PHASE E) VR2, DURING THE DISCHARGING PHASE.The input to a full-wave rectifier is 20 V AC (RMS). The load resistor is 20 ohms and rectifier losses are 4W. The ripple factor of the rectifier is: O A. 0.96 OB. 0.33 O C. 0.48 O D. None of the other choices are correct O E. 0.75