S. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel. C. means that a channel is depleted. d. will damage the channel. 4. The IGFET does not draw gate current because a. the gate diode has a high avalanche breakdown voltage b. the gate PN junction has a silicon dioxide barrier. c. bias voltage is always lower the 0.7 Vdc. d. its gate terminal is isolated from the channel. 5. A dual gate MOSFET a. provides low input impedance. b. can operate as a single gate device. c. requires two PN junctions. d. draws gate current for one of its gates.

S. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel. C. means that a channel is depleted. d. will damage the channel. 4. The IGFET does not draw gate current because a. the gate diode has a high avalanche breakdown voltage b. the gate PN junction has a silicon dioxide barrier. c. bias voltage is always lower the 0.7 Vdc. d. its gate terminal is isolated from the channel. 5. A dual gate MOSFET a. provides low input impedance. b. can operate as a single gate device. c. requires two PN junctions. d. draws gate current for one of its gates.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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