QUESTION Consider a uniformly doped silicon pn junction at at T=300° K. The junction capacitance at zero bias is C(0) and the junction capacitance with a 10-volt reverse-bias voltage is C(10). The ratio of the capacitances is C(0) = 2.75 %3D C(10) Also under reverse bias, the space charge width into the p-region is 0.2 of the total space charge width. Determine built-in potential. (n-10" cm. 1 6y1019, k=8.62x10 eV/K) 14

QUESTION Consider a uniformly doped silicon pn junction at at T=300° K. The junction capacitance at zero bias is C(0) and the junction capacitance with a 10-volt reverse-bias voltage is C(10). The ratio of the capacitances is C(0) = 2.75 %3D C(10) Also under reverse bias, the space charge width into the p-region is 0.2 of the total space charge width. Determine built-in potential. (n-10" cm. 1 6y1019, k=8.62x10 eV/K) 14

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

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