ợ: calculate the current at 2kN Si Si 2k www
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- What is CEMF?Q11) For the shown figure below .Explain the state of the given diodes .Calculate the current and the voltage through each diode. D1 Si D2- Si 1N3491 1N3491 1kQ 12V 3V 1N3491 Si D3 A- II !!!Q-3. Draw 1-V characteristics of 5 V silicon zener diode (Vz-5V) and show its parameters V Vz, Izx. Izs, Izm on the curve. Q-4. Determine the range of Road (Rmin, Rmax) that will maintain Vz at 5 volts for the circuit given below. Rs m 1.0kg V1 40 V Pzm=150mw
- FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6*Use 4 decimal places. For the circuit below, determine the diode voltages VD1 and VD2, diode currents Ip1 and Ip2, and voltage across the resistor, VRLIMIT- Assume r'a (for both diodes)=200. Note D, is Germanium, D2 is Silicon, VBJAS = 22V and RLIMIT = 2 kohms. VD1 = 0 V; VD2 = 0 V; Ip1 = Blank 3 mA; Ip2 = Blank 4 mA ; VRLIMIT = Blank 5 v Use ideal model. Capture3.JPG +VD1- +VRLIMIT +Vp2- Ip2 VBIAS 두
- The datasheet shown below for a group of commercial Zener diodes, according to the datasheet the typical voltage and leakage current of the Zener diode with model number 1N4732A are: * Tolerance- S% FAIRCHILD SEMICONDUCTOR Datasheet 1N4728A - 1N4758A Zener Diodes D0041 Glass case Electrical Characteristics 1,-25°C untess otherwise noted Vz (V) @ Iz (Note 1) Max. Zener Impedance Leakage Current Test Current Device Zz@lz ZzK @ IZK (mA) IR (HA) VR (V) Min. Тур. Мах. Iz (mA) (오) Izk (2) 3.315 3.42 1N4728A 3.3 3.465 76 10 400 1 100 1 1N4729A 3.6 3,78 69 10 400 100 1N4730A 3.705 4.085 3.9 4.095 64 9 400 50 1N4731A 4.3 4.515 58 400 10 1N4732A 4.465 4.7 4.935 53 500 1 10 1 1N4733A 4.845 5.1 5.355 49 550 10 1 1N4734A 5.32 5.6 5.88 45 600 10 1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 1N4736A 6,46 6.8 7.14 37 3.5 700 1 10 1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 b. 1V and 10uA O c. 4.7V and 10uA a. 4.465V and 10UA O d. 4.7V and 53mAGiven the following circuit with VDD = 9.5 V, R = 3.2 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. VDD I a. 0 A O b. 0.002766 A c. 0.002969 A d. 2.968750 A e. 2.765625 A R N V₂For the circuit below, assume the diodes operate with a constant voltage drop of .7V, find Vx, Vy, VD4 and ID2. 15V 15V Allt V1 V2 R1 1k IDC 1mA Vx R2 2k ww D1N4002 Vy D1N4002 7D1 D1N4002 D2 D3 R3 1k D4 D1N4002
- _mA. No If a Si diode at room temperature (25°) has a leakage current Is = 46 nA, k = 5,800, and V₁ = 0.65 V, The diode current is need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places. Add your answer Short answer. What is the greatest threat to a diode? Use the editor to format your answer Short answer. What type of bias makes a diode act as a closed switch? Use the editor to format your answerii) Analyse the circuit shown in below Figure. 2, assume diodes as silicon diode. Calculate: a. Vout b. IR3 c. Ip2 VCC 16V D1 D4 V3 10 V R1 2.2kQ D5 D2 Vout R3 2.8kQ IR3 Ip2 R2 4.7 kQ D3 V1 2.2 V V2 15VİNGİLİZCE TÜRKÇE RUSÇA In a doped semiconductor, Please choose one: a. no free electrons b. free electrons are generated thermally C. there are only holes D. answers B. and D. to. there are as many electrons as holes /5000 CLAMO 14:11 30.04.2021