Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority
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- . Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close toQuestion-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.Pure silicon wafer at the room temperature has an electrical conductivity of 5.5x1040'm3. The electron and hole mobilities of charge carriers are 0.35 m2 / V's1 and 0.12 m2 / V's' respectively. Compute electron and hole concentrations at room temperature.
- Assume that the conductivity of a pure semiconductor at an applied electric field of 450 mV/m is 2.75 X 1013/ S2-cm. Given that the drift velocity of electrons is 0.135 m/s and that of holes is 0.048 m/s, determine the density of the charge carriers per cubic meter in this material.Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10^19 m^-3 and their mobility is 1.6 m^2 (V-s), then the resistivity of the semiconductor (since, it is an n-type semiconductor contribution of holes is ignored) is close to....?Hall coefficient of a specimen of depend silicon found to be 3.66×10m³/C. The resistivity of the specimen is 8.93×10-32 m. Find the density of the charge carriers (in electrons/m³) and the mobility in (m/V.s). 1.7e22, 0.04 O 1.8e22, 0.04 O 1.7e22, 0.05 O 1.8e22, 0.05 O
- The electron number density in a semiconductor varies from 1020 m³ to 10¹2 m³ linearly over a distance of 4 µm. Determine the electron diffusion current and electric field at the midpoint if no current flows, He = 0.135 m²V-¹s¹ and T = 300 K.Q 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times, the electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge carriers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C 1- Fermi position at each end 2- Energy gap in ev 3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/Vs 0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm 4- Density of carriers for each party (majority and minority) 5- The effort of the divider 6- The junction current at an amplitude of 0.4 7- The…Strontium crystal has a mass density of 2.64 g/cm' and a molar mass of 87.62 g/mol Calculate Fermi energy and Fermi velocity of electrons in Sr crystal.
- In an n-type semiconductor at room teperature, the electron concentration varies linearly from 3 x 10 17 to 3 x 10 15 cm -3 over a distance of 740 µm. calculate the diffusion current density if the electron diffusion current density if electron diffusion coefficient is 235 cm 2 /s.A docs.google.com/forms/d/e. Marks 8 The temperature term isn't a part of the .total current density in a semiconductor True False The random motion of holes and free electrons due to thermal agitation is called .drift True False Under the equilibrium conditions, the number of holes which are thermally generated is equal to the holes lost by .recombination True False II >Re 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specify