In the Figure as shown below the current (I) will be equal to: bläs 6 Assume that all diodes are silicon practical diode model 4 KUZ. . 土 lovt 32 KSZ 2.2 mA O 2.3 mA O 2.4 mA 1.1 mA
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- I k2 Q2 /: For the Zener diode network, R 1. if V; =20 v, check if the Zener diode is in a breakdown and find VL, VR, Iz, and Pz Vz = 10 V IZM = 32 mA RL V, = 50 V 2. Find the maximum and minimum value of V¡ to ensure that VL=VzQIA/ Find the resistivity of intrinsic Silicon if n=1.516x10"c and µ=1300 if donor -type impurity is added to the intrinsic of 1 atom per 10* silicon atoms find resistivity. Assume Np=5x10"clectron /cm'Plz choose the correct answer with reason 5- If a diode is forward biased, the recombination of pairs of e-h producea. Heatb. Lightc. Radiationd. All the above
- Determine the voltage across the silicon diode assuming the practical diode model. Write the answer in terms of V. R1 1kQ D1 V1 10V V2 15V « Previous Next Hi/TB- From fig 3 bellow, A 19.25V, 900 mW zener diode is used for providing a 19.25V stabilized supply to a variable load. If the input voltage is 40.5V, cal- culate (i) the value of series resistance R required. (i) Diode current when the load is 910 2. (i) Zener current. R RL ZENER Vi Fig 3Q6:- (a) Using diode equation, determine the diode current at 20°C for a silicon diode with n=2, Is=0.1μA at a reverse-bias potential of -10 V. (b) Is the result expected? Why?
- *42. a. Determine VL, IL, Iz, and IR for the network of Fig. 186 if RL b. Repeat part (a) if RL c. Determine the value of R, that will establish maximum power conditions for the Zener diode. = 180 0. = 470 Q. d. Determine the minimum value of R to ensure that the Zener diode is in the "on" state. R$ 2202 IR Vz = 10 V RL VL 20 V PZ max = 400 mW FIG. 186 Problem 42.For the circuit shown in the Figure , consider silicon diodes with forward drop voltage of 0.7 V. If Vs = 150 Vrms and RL = 8 KN, the average value of load current is: 1:1 Vout Vs RL Oa. 8.413 mA Ob. 10.413 mA Oc. 12.413 mA Od. 14.413 mA elleeDetermine whether each silicon diode in Figure below is forward-biased or reverse- biased. 100 V 10 km) www www 102 SV 10 V th (A) 10 k ww 20 V (B) KI * (C) www 560
- www THE If you have a battery voltage source of 10V, R = 1k0, and the diode is made from silicon. Using simplified model approach, what is the voltage accross the resistor? 0.3V 4.4V 0.7V 9.3V2) Consider a two terminal semiconductor diode a) Calculate the thermal voltage of a diode at room temperature about 27°C. b) Calculate diode dynamic resistance in case of 13 mA diode current. (Boltzman's constant is 1.38x10-23 J/K, and magnitude of electron charge is 1,6X10-19 C)2. In this experiment, you will be finding a voltage at which the anode current is maximum. To find the voltage accurately you select the peak area of the data and fit it with a function of a form ax²+bx+c (parabola) as shown in the figure 3. The better way to write a parabola would be y = a(x-xo)² + yo. 25 y = -2.7526x2 + 103.02x- 943.68 R2 = 0.9774 20 10 15 20 25 Voltage (V) Figure 3: Determining voltage for maximum current Let's try to understand first how there two forms are related and determine the voltage value at which the maximum current occurs. Expand y =a(x-xo)² + yo and determine a (coefficient of x?) that а. involves a and/or xo and/or yo. b. Figure out b (should be a coefficient of x) that should involve a and/or xo and/or yo. с. Find an expression for x0 in terms of a and b. (Use the answers you got in a and b). d. Using the fitting equation on the graph find the value of xo. Current (A)