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- 4.) In which mode will a diode generally not conduct electricity? a. Bidirectional Biased b. None of these c. Forward Biased d. Reversed Biased 5.) Consider the following schematic symbol of a semiconductor device: Which side is the Cathode? (Picture inserted down below) a. Side A b. Both side A and B c. Side B d. Neither side A or B 8.) Integrated circuits can be broken down into three basic categories. Which category does an operational amplifier (or op-amp) fall into? a. Analog b. None of these c. A combination of analog and digital d. DigitalConsider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OVAssume the diodes to be ideal ,descibe the transfer functionality for the following circuit.
- In the circuit shown below. Determine the following a. Vs (at the secondary) b. Vout (across RL) c. Vrip (ripple votage) d. VDC e. PIV (Peak Inverse Voltage) 10:1 Output 115 V mis 60 Hz RL 2.2 k) D, 50μF- All diodes are IN4001. Tund AlMannai EENG261 Page 5/11The Leakage current in diodes is produced in O a forward biased diode. can be found in forward biased and reverse biased diodes. O a reverse-biased diode. while used a diode as a simplified diodes.1. What is a generic diode and when it was invented? please provide an original response, thank you
- consider the figure below that shows an approximated reverse recovery turn-off characteristics for a power diode. Show that the following relation can express the total reverse recovery charge, Qrr = 1/2(trr*ts1) di1/dt =1/2(trr*ts21) di2/dt * ip Isl 1s2! -IrFor the circuit shown in the Figure, if the diodes are silicon diodes with VD(on)=0.7 V, and VIn=50 sin wt V, V1 =7 V and V2 =13 V, then the value of VOUT (p-p) is: R1 D, D2 VIN VOUT vi E v2= Ca. 19.4 V Ob. 17.4 V Cc. 15.4 V Cd. 21.4 V2. Figure A.1 shows I-V characteristics of two diodes, namely A and B. Diode A has higher dynamic resistance than diode B. UTM &UT ID 4 5UTM 3TM UTM UTM &UTM 5 UTM & UTM UTM 3 UTM 03 TM 6 UT 0.68 (a) UTM VD Figure A.1 State one possible reason why the diodes have different knee voltage values. UTM OM & UTM 3 UTM & TM (b) Based on Figure A.1, identify the knee voltage of UTM" TM 5 UTde BE UTM