Highly doped region in a transistor is: A. Emitter, B. Collector, C. Base, D. All are equally doped. Thinnest region in a transistor is: A. Emitter, B. Base, C. Both of the above, D. All of the above. Junction field effect transistor or JFET has three terminals which corresponds to the E-B-C of the BJT A. D-S-G, B. D-G-S, C. S-G-D, D. S-D-G.

Highly doped region in a transistor is: A. Emitter, B. Collector, C. Base, D. All are equally doped. Thinnest region in a transistor is: A. Emitter, B. Base, C. Both of the above, D. All of the above. Junction field effect transistor or JFET has three terminals which corresponds to the E-B-C of the BJT A. D-S-G, B. D-G-S, C. S-G-D, D. S-D-G.

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 13CQ: The NaCl crystal structure is FCC. The equilibrium spacing is r0=0.282nm. If each ion occupies a...

See similar textbooks

Similar questions

The collector current of a transistor is 3.4 A for a base current of 4.2 mA. What is the current gain?
What are the two main approaches used to determine the energy levels of electrons in a crystal?
The NaCl crystal structure is FCC. The equilibrium spacing is r0=0.282nm. If each ion occupies a cubic 3 volume of r03 , estimate the distance between “nearest neighbor” Na+ ions (center-to-center)?
Estimate the fraction of Si atoms that must be replaced by As atoms in order to form an impurity band.
In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above.
The emitter-base junction in a transistor has... A. Forward bias at all times B. Reverse bias at all times C. Low resistance D. None of the above D В A C
157. The barrier potential of a p-n junction depends on : a. Type of semiconductor material b. Amount of doping c. Temperature Which one of the following is correct ? 1. (b) only 2. (b) and (c) only 3. (a), (b) and (c) d. (a) and (b) only
4. For a silicon diode, the value of the forward-bias voltage typically a. must be greater than 0.3 V b. must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority carriers 5. Ideally, a diode can be represented by a a. voltage source b. resistance c. switch d. all of these 6. When a 60 Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the output frequency is а. 120 Hz b. 30 Hz c. 60 Hz d. O Hz 7. For a certain 12 V zener diode, a 10 mA change in zener current produces a 0.1 V change in zener voltage. The zener impedance for this current range is a. 10 b. 100 2 c. 100
1. With rise in temperature the electrical conductivity of intrinsic semiconductor: a. Increase b. decrease c. Increase and then decrease d. decrease and then Increase 2. In a semiconductor a. There are no free electrons at any temperature b. There are no free electrons at 0K c. Number of free electrons more than that d. None of the above 3.Which of the following characteristics of electrons determines the current in a conductor? (a) Drift velocity alone. (b) Thermal velocity alone. (c) Both drift velocity and thermal velocity. (d) Neither drift nor thermal velocity. 4.If the electric current in a coil is doubled the magnetic flux density a) halves b) remains unchanged c) doubles d) quadruples
The base of a transistor is .... Doped A. Lightly В. Неavily C. Moderately D. None of the above В C D A
Highly doped region in a transistor is: A. Emitter, B. Collector, С. Base, D. All are equally doped. Thinnest region in a transistor is: A. Emitter, В. Вase, C. Both of the above, D. All of the above. • Junction field effect transistor or JFET has three terminals which corresponds to the E-B-C of the BJT A. D-S-G, B. D-G-S, C. S-G-D, D. S-D-G.
A light emitting diode is A. heavily doped, B. lightly doped, C. Intrinsic semiconductor, D. Zener diode. Which process of the Electron-hole pair is responsible for emitting of light? A. generation, B. movement, C. recombination, B. diffusion. GAAS LED emits A. Microwaves, B. IR radiations, C. Ultra Violet, D. X-rays.