Consider a uniformly doped silicon p-n junction at T=300°K. At zero bias, only 40 percent of the total space charge region is to be in the p-region. The built-in potential barrier is 1.2 volts. For zero bias determine total space charge region. (q=1.6x101°, kT/q=0.0259 volts at T=300°K, n=1010 cm, e=103.545x10")

Consider a uniformly doped silicon p-n junction at T=300°K. At zero bias, only 40 percent of the total space charge region is to be in the p-region. The built-in potential barrier is 1.2 volts. For zero bias determine total space charge region. (q=1.6x101°, kT/q=0.0259 volts at T=300°K, n=1010 cm, e=103.545x10")

Automotive Technology: A Systems Approach (MindTap Course List)

6th Edition

ISBN:9781133612315

Author:Jack Erjavec, Rob Thompson

Publisher:Jack Erjavec, Rob Thompson

Chapter22: Basics Of Electronics And Computer Systems

Section: Chapter Questions

Problem 6RQ: A is the simplest type of semiconductor.

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