Consider a silicon PN junction diode at T = 25°C with the following parameters: the concentration of theminority carriers in P-side is 2.25 x 10 electron/m³, and in N -side is 4.5 x 104 hole/m', the hole's diffusionlength 190µm, the hole's diffusion constant (30 cm /s), carriers lifetime t, is 2 x10° s and t, is 4 x 10s, the-6sectional area is 10° m? , and the intrinsic carriers concentration ( n;= 1.5x1010 cm). If the current in thejunction is 3mA when the diode forward is biased at 0.65V, determine:1- The electron's diffusion constant.2- The impurities concentration in the P-side, and in the N-side.3- The current in the junction when the temperature rises to150°C.

1. since Thermal voltage at room temperature VT=25.9mV For silicon, the Mobility of electrons and…

Consider a silicon PN junction diode at T 25°C with the following parameters: the concentration of the minority carriers in P-side is 2.25 x 10 electron/m³, and in N -side is 4.5 x 10 hole/m³, the hole's diffusion length 190um, the hole's diffusion constant (30 cm/s), carriers lifetime t, is 2 x10° s and t, is 4 x 10s, the sectional area is 10 m2 , and the intrinsic carriers concentration ( n,= 1.5x1010 cm). If the current in the junction is 3mA when the diode forward is biased at 0.65V, determine: 1- The electron's diffusion constant. 2- The impurities concentration in the P-side, and in the N-side. 3- The current in the junction when the temperature rises to 150°C.

Consider a silicon PN junction diode at T 25°C with the following parameters: the concentration of the minority carriers in P-side is 2.25 x 10 electron/m³, and in N -side is 4.5 x 10 hole/m³, the hole's diffusion length 190um, the hole's diffusion constant (30 cm/s), carriers lifetime t, is 2 x10° s and t, is 4 x 10s, the sectional area is 10 m2 , and the intrinsic carriers concentration ( n,= 1.5x1010 cm). If the current in the junction is 3mA when the diode forward is biased at 0.65V, determine: 1- The electron's diffusion constant. 2- The impurities concentration in the P-side, and in the N-side. 3- The current in the junction when the temperature rises to 150°C.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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