Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1.5x1016electron/m³) with the doping concentration of (2x10 atoms/m) of the phosphorus and (1×101 atoms/m) of Boron. Given the mobility for the electrons (0.15m?/V.s) and the mobility for the holes (0.05m?/V.s) and the electric field (100V/m). 66.2mA O 64.2mA O 67.2mA 65.2mA O 66.5mA 64.5mA O

Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1.5x1016electron/m³) with the doping concentration of (2x10 atoms/m) of the phosphorus and (1×101 atoms/m) of Boron. Given the mobility for the electrons (0.15m?/V.s) and the mobility for the holes (0.05m?/V.s) and the electric field (100V/m). 66.2mA O 64.2mA O 67.2mA 65.2mA O 66.5mA 64.5mA O

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Similar questions

Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3 and the value of kT/q to be 25 mV at 300 K. Compared to the undoped silicon, The Fermi level of doped silicon (a) Goes down by 0.13 eV (b) Goes up by 0.13 eV (c) Goes down by 0.427 eV (d) Goes up by 0.427 eV
Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
Silicon is doped with a phosphorus concentration of 2×1016/cm3. What are NA and ND? What are the electron and hole mobilities? What are the mobilities if boron in a concentration of 3×1016/cm3 is added to the silicon? What are the resistivities?
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given by
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Q7/ Silicon has a conductivity of 5 x 10- (N.m)- when pure. How many indium atoms/m3 are required so that the conductivity of 200 (.m)- could be achieved in silicon using indium as an impurity? m2 Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m 0.13 V. Sec
The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?
A diode with a voltage drop in the forward direction of 0.7V at 1.0mA and n = 1, what is the value of the current if it operates at 0.5V?
Given the relationship for semiconductor diode is : I = Io ( exp(eV/kT)-1). Proof the equation in case of PN junction.
What is the value of reverse recovery charge developed in diode which is having the rate of fall of diode current 34.7 A/us and t, is equal to 5.6 ps. O a. 1088.19 µC O b. 971.60 µC O c. 313.60 µC O d. 544.10 µC