b) e) f) The two N-channel MOSFETS in Figure A1 operate in saturation region and their bulk terminals are connected to Vss. They have the same dimensions: W=2.0 μm and L = 1.0 μm. Assuming -- Vad 3.3 V, V,= 0.0 V, VTHO= 1.0 V (the threshold voltage at OV VBS), k'n = 40 μA.V-², λ = 0.01 V-¹. What is the function of this circuit? Calculate the magnitude of DC current which must flow in MN2 to produce a slew rate of -10 mV/ns when C₂ = 1.0 pF. Calculate the DC voltage V, required to generate the current derived in part (b). The channel-length modulation effect can be neglected in the calculation. Sketch the low-frequency small signal equivalent circuit. Given gedlge is 0.25, calculate the output resistance using your answers from parts (a) to (d). The channel-length modulation effect can be neglected in the calculation. Suppose V stays the same, and the bulk terminal of MNI is connected to its source instead, will you becomes higher or lower? What about the low frequency small signal gain and output resistance? V MN1 MN2 Vss Figure A1 pat CL

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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question e) please

b)
e)
f)
The two N-channel MOSFETS in Figure A1 operate in saturation
region and their bulk terminals are connected to Vss. They have the
same dimensions: W=2.0 μm and L = 1.0 μm. Assuming --
Vad 3.3 V, V,= 0.0 V, VTHO= 1.0 V (the threshold voltage at OV VBS),
k'n = 40 μA.V-², λ = 0.01 V-¹.
What is the function of this circuit?
Calculate the magnitude of DC current which must flow in MN2 to
produce a slew rate of -10 mV/ns when C₂ = 1.0 pF.
Calculate the DC voltage V, required to generate the current derived in
part (b). The channel-length modulation effect can be neglected in the
calculation.
Sketch the low-frequency small signal equivalent circuit.
Given gedlge is 0.25, calculate the output resistance using your
answers from parts (a) to (d). The channel-length modulation effect
can be neglected in the calculation.
Suppose V stays the same, and the bulk terminal of MNI is
connected to its source instead, will you becomes higher or lower?
What about the low frequency small signal gain and output
resistance?
V
MN1
MN2
Vss
Figure A1
pat
CL
Transcribed Image Text:b) e) f) The two N-channel MOSFETS in Figure A1 operate in saturation region and their bulk terminals are connected to Vss. They have the same dimensions: W=2.0 μm and L = 1.0 μm. Assuming -- Vad 3.3 V, V,= 0.0 V, VTHO= 1.0 V (the threshold voltage at OV VBS), k'n = 40 μA.V-², λ = 0.01 V-¹. What is the function of this circuit? Calculate the magnitude of DC current which must flow in MN2 to produce a slew rate of -10 mV/ns when C₂ = 1.0 pF. Calculate the DC voltage V, required to generate the current derived in part (b). The channel-length modulation effect can be neglected in the calculation. Sketch the low-frequency small signal equivalent circuit. Given gedlge is 0.25, calculate the output resistance using your answers from parts (a) to (d). The channel-length modulation effect can be neglected in the calculation. Suppose V stays the same, and the bulk terminal of MNI is connected to its source instead, will you becomes higher or lower? What about the low frequency small signal gain and output resistance? V MN1 MN2 Vss Figure A1 pat CL
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