At 300 K, for a diode curret of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V, whereas a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is

At 300 K, for a diode curret of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V, whereas a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

In a Simplified Diode Model, up to the barrier potential or Vdiode the current through the diode is increasing. Select one: True False
A silicon diode has a saturation current of 5nA at 250C. What is the saturation current at 1000C? For the given series diode configuration, determine Va, Is, and Vz. Si EE 10 V (a)
A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kQ and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode? * A. 10 V B. 1.0 V C. 0.7 V D. 0.3 V
3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.
For the circuit shown in the figure below, consider the diode as an ideal diode & R.M.S value of source voltage as Vs. The output voltage waveform at R is most likely to have zero value in the positive half cycle and a peak value of 1.414Vs in the negative half суcle sine-wave nature with a peak value 1.414VS zero value in the negative half cycle and a O peak value of 1.414Vs in the positive half сycle O sine-wave nature with a peak value Vs
A silicon diode has a reverse saturation current of 50nA at room temperature (25degrees centigrade). If the operating temperature is raised by 50-degrees centigrade, what is now the reverse saturation current?
A silicon diode with a forward resistance of 100 is connected in series with a 5000 resistor. If an a.c voltage of 20V peak is connected across the series combination of the diode and the resistor what will be the peak value of the current through the diode and the peak output voltage? What will be the peak value of the current through the diode and the peak output voltage if the diode were ideal?
Consider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OV
Given the relationship for semiconductor diode is : I = Io ( exp(eV/kT)-1). Proof the equation in case of PN junction.
Calculate the currents passing through the diodes D1 and D4 in the circuit given below. (All diodes are silicon).
For the diode applied in the circuit has a knee current of 5mA, and a maximum allowed power dissipation of 300mW. What are the maximum and minimum load currents that can be drawn safely from the circuit with constant voltage output Vo of 6V?
SOLVE (show the process) for the current at room temperature in a diode if the forward voltage is given at Vd=0.3 and the reverse saturation current Is=100nA