Are the following statements correct or wrong? Justify your answer. (a) GTO requires very high current applied to its gate to be turn off. (b) IGBT is a current driven device. (c) IGBT is more efficient than BJT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETs are used for low frequency applications.

Are the following statements correct or wrong? Justify your answer. (a) GTO requires very high current applied to its gate to be turn off. (b) IGBT is a current driven device. (c) IGBT is more efficient than BJT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETs are used for low frequency applications.

EBK ELECTRICAL WIRING RESIDENTIAL

19th Edition

ISBN:9781337516549

Author:Simmons

Publisher:Simmons

Chapter29: Service-entrance Calculations

Section: Chapter Questions

Problem 3R: a. What is the ampere rating of the circuits that are provided for the small-appliance loads? _____...

See similar textbooks

Similar questions

For the circuit shown, let Vcc = 3.3V, RE = 500 Ω, RC = 4 kΩ, R1= 85 kΩ, R2 = 35 k Ω, and β = 150 Using approximation, determine the Q-point parameters: IBQ, ICQ, and VCEQ. Indicate the exact numerical values, following the given unit.
Are the following statements correct or wrong? Justify your answer. (a) GTO requires very low current applied to its gate to be turn off. (b) IGBT is a voltage driven device. (c) BJT is more efficient than IGBT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETs are used for high frequency applications.
For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
using the Nyquist criterion determine the range of K for the stability of the following system.
MMF method is called optimistic method as the regulation obtained is more than the actual value. Select one: True False
For the transistor , IS = 6×10−16 μA,αF = 0.985, and αR = 0.25. (a) What type oftransistor is in this circuit? (b) Label the collector, base, and emitter terminals of the transistor.(c) Label the emitter-base and collector-base voltages, and label the normal direction for IE , IC, andIB. (d) Write the simplified form of the transportmodel equations that apply to this particular circuitconfiguration. Write an expression for IE /IC. Writean expression for IE /IB. (e) Find the values of IE ,IC, IB, βF , βR, VE B, and VC B.
Show your complete solution for the theoretical computations. Thanks!
9) This QUESTION FROM DIGITAL COMMUNICATIONS II course.
What are the Applicationsof Load Sharing?
Draw the Nyquist plot for the system in the figure below. Using the Nyquist stability criterion, determine the range of K for which the system is stable. Consider both positive and negative values of K.( Need only handwritten solution please otherwise downvote)
A typical cellphone battery has 2800mAh capacity. It is an obvious processing design that allow cellphone to operate in various power conservative modes. Typically, in idle mode it consume lowest power, in receiving mode little higher, while during a call it consume maximum amount of power ignoring fact of much power consumption of current generation multimedia browsing. Consider above cellphone use 1mA in idle mode, 6mA in wakeup receive mode, and during an active call, it consumes 100mA. During a typical day, it remain 20 Hrs in idle mode, 3.5 Hrs in wake-up receiving mode, and half an hours in active call per day. Calculate battery consumption in each mode and collective battery life
Mention 4 factors out of many factors that must be considered and become necessary data in the design of the power transfer system, explain.