An n-channel MOSFET has oxide thickness tox = 6 nm, electron mobility μn = 460 cm²/V-s, threshold voltage V₁ = 2.0 volts, and geometry W/L = 10. What is the drain current ip in milliamps if VGS = 5.00 volts and vps = 0.75 volts? NOTE: be careful to make sure the units are correct (e.g, cm² vs. m², amps vs. milliamps, etc.) Your Answer:

An n-channel MOSFET has oxide thickness tox = 6 nm, electron mobility μn = 460 cm²/V-s, threshold voltage V₁ = 2.0 volts, and geometry W/L = 10. What is the drain current ip in milliamps if VGS = 5.00 volts and vps = 0.75 volts? NOTE: be careful to make sure the units are correct (e.g, cm² vs. m², amps vs. milliamps, etc.) Your Answer:

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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