A temperature-stable resistor is made by connecting a resistor made of silicon in series with one made of iron. If the required total resistance is 1200 Q in a wide temperature range around 20°C, what should be the resistance of the (a) silicon resistor and (b) iron resistor? (See the table below.) Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N-m) Temperature Coefficient of Resistivity, a (K) Material Typical Metals Silver 1.62 x 10-8 4.1 x 10-3 Copper 1.69 x 10-8 4.3 x 10-3 Gold 2.35 x 10-8 4.0 x 10-3 Aluminum 2.75 x 10-8 4.4 x 10-3 Manganin Tungsten 4.82 x 10-8 0.002 x 10-3 5.25 x 10-8 4.5 x 10-3 Iron 9.68 x 10-8 6.5 x 10-3 Platinum 10.6 x 10-8 3.9 x 10-3 Silicon, pure Silicon, n-type Silicon, p-type Typical Semiconductors 2.5 x 103 8.7 x 10-4 -70 x 10-3 2.8 x 10-3 Typical Insulators 1010 – 1014 Glass Fused quartz -1016 "An alloy specifically designed to have a small value of a. Pure silicon doped with phosphorus impurities to a charge carrier density of 10 m- "Pure silicon doped with aluminum impurities to a charge carrier density of 10 m. (a) Number Units (b) Number Units
A temperature-stable resistor is made by connecting a resistor made of silicon in series with one made of iron. If the required total resistance is 1200 Q in a wide temperature range around 20°C, what should be the resistance of the (a) silicon resistor and (b) iron resistor? (See the table below.) Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N-m) Temperature Coefficient of Resistivity, a (K) Material Typical Metals Silver 1.62 x 10-8 4.1 x 10-3 Copper 1.69 x 10-8 4.3 x 10-3 Gold 2.35 x 10-8 4.0 x 10-3 Aluminum 2.75 x 10-8 4.4 x 10-3 Manganin Tungsten 4.82 x 10-8 0.002 x 10-3 5.25 x 10-8 4.5 x 10-3 Iron 9.68 x 10-8 6.5 x 10-3 Platinum 10.6 x 10-8 3.9 x 10-3 Silicon, pure Silicon, n-type Silicon, p-type Typical Semiconductors 2.5 x 103 8.7 x 10-4 -70 x 10-3 2.8 x 10-3 Typical Insulators 1010 – 1014 Glass Fused quartz -1016 "An alloy specifically designed to have a small value of a. Pure silicon doped with phosphorus impurities to a charge carrier density of 10 m- "Pure silicon doped with aluminum impurities to a charge carrier density of 10 m. (a) Number Units (b) Number Units
Chapter9: Current And Resistance
Section: Chapter Questions
Problem 63P: Consider a power plant is located 60 km away from a residential area uses Q-gauge (A=42.40mm2) wire...
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