4. R, = 50 2 ET = 100 V R2 =20 R3 = 60 0 %3D Ri= 240 Q
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- Q2/ Prove that Pp E - E, = kT In %3D 'fpliting Q9. For the circuit shown in Figure C9, Calculate the following i) Current through the Silicon diode (Isi). ii) Current through the Resistor R2 (1). iii) Current through the diode D4 (IGe4). iv) Voltage at points V3 and V4. Is D1. D2 Si Si oV4 RI 1.3K2 R3 2.7K R2 3K2 IGe4| 15V D5 Si 03 D4 Ge Ge V2 1V Figure C9*Use 4 decimal places. For the circuit below, determine the diode voltages VD1 and VD2, diode currents Ip1 and Ip2, and voltage across the resistor, VRLIMIT- Assume r'a (for both diodes)=200. Note D, is Germanium, D2 is Silicon, VBJAS = 22V and RLIMIT = 2 kohms. VD1 = 0 V; VD2 = 0 V; Ip1 = Blank 3 mA; Ip2 = Blank 4 mA ; VRLIMIT = Blank 5 v Use ideal model. Capture3.JPG +VD1- +VRLIMIT +Vp2- Ip2 VBIAS 두
- ii) Analyse the circuit shown in below Figure. 2, assume diodes as silicon diode. Calculate: a. Vout b. IR3 c. Ip2 VCC 16V D1 D4 V3 10 V R1 2.2kQ D5 D2 Vout R3 2.8kQ IR3 Ip2 R2 4.7 kQ D3 V1 2.2 V V2 15V*Use 4 decimal places. **Note D1 is Germanium, D2 is Silicon, For the circuit below, determine the diode voltages VD1 and VD2, diode currents ID1 and ID2, and voltage across the resistor, VRLIMIT. Use practical model. Assume r'a=150. VBIAS = 15V and RLIMIT = 1.5kohms. VD1 = Blank 1 V; VD2 = Blank 2 V; Ip1 = Blank 3 mA; Ip2 = Blank 4 mA ; VRLIMIT = Blank 5 V Capture3(1).JPG +Vo1- +VRLIMIT +VD2- Io2 VBIASASAP
- uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6In the circuit below, we have a Zener Diode circuit with a load, RL. Use the same measurements for source voltage V1 and resistor R3 resistance as in the circuit schematic. V1 -15V R3 2700 D1 1N753A RL Determine the lowest possible value for the load RL, so that the voltage drop across it is equal to the Zener voltage. For your diode, use model Zener 1N753A. This diode has a Zener voltage of 6.2V, a Zener current of 60mA, a Zener impedence of 72, and a test current of 20mA.R1 = 1 kohms R2 = 1.4 kohms R3 = 6.8 kohms E = 8V D1: Si, rB = 2 ohms, rR = 215 kohms D2: Si, rB = 7 ohms, rR = 590 kohms Apply each of the diode approximations and determine: a) Current through D1 b) Voltage across D_2 c) Voltage across R_3
- a. If you do not go completely around the loop when applying Kirchhoff’s voltage law, then the algebraic sum of the voltages cannot be determined the algebraic sum of the voltages will always be positive the algebraic sum of the voltages will always be negative the algebraic sum is the voltage between the start and finish points b. A p -type semiconductor is a semiconductor doped with impurity atoms whose electron valence is +4 pentavalent impurity atoms trivalent impurity atoms*Use 4 decimal places. **Note D1 is Germanium, D2 is Silicon, For the circuit below, determine the diode voltages VD1 and VD2, diode currents ID1 and ID2, and voltage across the resistor, VRLIMIT. Use practical model. Assume r'=15N. VBIAS = 12V and RLIMIT = 950 ohms. VD1 = Blank 1 V; VD2 = Blank 2 V ; Ip1 = Blank 3 mA; Ip2 = Blank 4 mA ; VRLIMIT = Blank 5 V Capture3(1).JPG ... +Vo1- +VRLIMIT- +Vp2- Io2 VBIAS Blank 1 Add your answer Blank 2 Add your answer Blank 3 Add your answer Blank 4 Add your answer Blank 5 Add your answerQ4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below (assume Si diodes) V_DC V DC 0,75 (1+ 0.25 V_SIN V SIN RL -1 V SOR V_SQR 0.75 -0.75 V TRI 1 V_TRI -1