30. The Fermi energy is a constant throughout a semiconductor that is in....... O a. P-type. O b. N-type. O c. Compound. O d. High temperature.
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- 4. For a silicon diode, the value of the forward-bias voltage typically a. must be greater than 0.3 V b. must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority carriers 5. Ideally, a diode can be represented by a a. voltage source b. resistance c. switch d. all of these 6. When a 60 Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the output frequency is а. 120 Hz b. 30 Hz c. 60 Hz d. O Hz 7. For a certain 12 V zener diode, a 10 mA change in zener current produces a 0.1 V change in zener voltage. The zener impedance for this current range is a. 10 b. 100 2 c. 100The emitter-base junction in a transistor has... A. Forward bias at all times B. Reverse bias at all times C. Low resistance D. None of the above D В A C12. A semiconductor has E = 1.5 eV, m, * = 10m*, n = 10³ cm³, at T = 300K. g h e a. Determine the position of the intrinsic Fermi level with respect to the center of the bandgap. b. Impurity atoms are added to lower the Fermi level by 0.45 eV below the bandgap. Are acceptor or donor atoms added? What is the concentration of the added impurity atoms?
- Suppose that a semiconductor device is using a 10.51-mg sample of a hypothetical element By, that is doped with 0.8 % (by mole) of another hypothetical element Do. How many Do atoms are in the sample? Atomic Mass: By: 26.274 g/mol Do: 82.183 g/mol a. 3.75e+18 b. 4.64e+18 c. 1.93e+18 d. 2.84e+18A silicon diode is operated in an environment whose temperature is ten times its ambient temperature. Its forward breakover voltage will a. not change at all b. be slightly greater than 0.7 V c. be less than 0.7 V d. be greater by ten timesQ1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N= 4x10cm, The ionization %3D energy for Indium is given as 0.16eV. Calculate: XX-44 a) The carrier concentrations n,, Po and the Fermi level E - Ep at the temperature of T = xx + 60 °K . 40+ xX N, cm, for xx < 50 100 b) The temperature at which P, = 60+ xX N, cm, for xx2 50 100 D. (Ex: xx = 00 → P, = 0.4N=1.6x1o cm; xx= 99 → P, = 1.59N, = 6.36x10 cm) c) Using a computer program, plot Po (T) versus temperature over the range 0ST S 800 °K in linear and logarithmic scale.
- Calculate the base current required to switch a resistive load of 8mA for an npn- transistor with B = 156. Lütfen birini seçin: a.113.21 pA b.84.97 µA c.66.67 µA d.96.38 pA e.51.28 µA1. The effective density of electrons in the conduction band is 2.8×10¹⁹ cm at room temperature and the intrinsic fermi level is 0.25 eV belw energy of the conduction band. Find the number of electrons in conduction band. 2. Calculate the number of holes in valence band at 300 °K if the effective density of holes in the valenc band is 1.04 x10¹9 cm ³ and the intrinsic fermi level is 0.27 eV above energy of the valenc band. 3 3 3. Prove that N = 4.828 × 10²¹ (T mA silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.
- 1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 10¹5 cm-³ and Na = 5 x 10¹6 cm ³. n₁ = 1.5 x 10¹0 cm ³. &, = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na3. How many electrons in one bit? Do an order of magnitude estimate of a transistor (say, 5nm long gate, 10nm deep into the silicon, 1um wide. See the illustration above) You may assume each silicon atom contributes one electron.12. If the conductivity of the pure Germanium change with temperature according the fol- lowing relation, so what is the energy gap of the Germanium? -4350 exp