2. Determine the high-cutoff frequency for BJT emitter-bias amplifier. Vcc 24V 4.5kohm 42kohm Vo 1.2uF 12uF RL B =110 1.9kohm 8.5pF 27kohm 12kohm 6.5pF Vs 2kohm 22uF Cbe= 37 pF ; Cbc= 6 pF ; Cce= 3 pF II

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Q: 2. Determine the high-cutoff frequency for BJT emitter-bias amplifier. Vcc 24V 4.5kohm 42kohm Vo…

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.