1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA =4.5 x 1016 / cm³ and Np = 5.6 x 1017/ cm³. Value of n¡ at T = 300 K is 1.5 × 1010 / cm³ . Calculate%3D(i) built in potential Vbi(ii) total depletion width W in µm(iii) the depletion capacitance in F/cm?For the equations, look for relevant equations from the textbook.

It is given that: T=300KNA=4.5×1016 cm-3ND=5.6×1017cm-3ni=1.5×1010cm-3εr=11.7

1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³ . Calculate (i) built in potential Vbi (ii) total depletion width W in um (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.

1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³ . Calculate (i) built in potential Vbi (ii) total depletion width W in um (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

How is a solid-state diode tested? Explain.
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
A silicon diode has a reverse saturation current of 50nA at room temperature (25degrees centigrade). If the operating temperature is raised by 50-degrees centigrade, what is now the reverse saturation current?
3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.
Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q
In a Simplified Diode Model, up to the barrier potential or Vdiode the current through the diode is increasing. Select one: True False
Upload answer sheets Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron current densities 5 A/cm2 and 2 A/cm² respectively at the edges of space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pn junction. 25 cm?/s Dn 10 cm?/s Dp 5x10-7s 5x107s Tno Tpo 1.5x1010 cm 3 n; CSync to ch Once you upload files from your second device, click on Camera 50f065047c73f&bd: F9jdF9jaA%3D%3D&tsi=163&et=#
A p-n step junction diode with a contact potential of 0.65 V has a depletion width of 1μm at equilibrium. Determine the forward voltage at which this width reduces to 0.6μm.
We have a junction diode that has iD = 0.2 mA for vD = 0.6 V. Assume that n = 2 and VT = 0.026 V. Use the Shockley equation to compute the diode current at vD = 0.65 V and at vD = 0.70 V.
10+ D NAME: The diodes in the circuit below have a saturation current Is = 10-¹4A. The NMOSFET has a threshold voltage of +1V and a K parameter of 10mA/V². > ID = Is (evo/VT - 1) a) Use the exponential diode model b) Oops. Someone built the circuit below, and apparently made a mistake selecting the components. They measure the voltage VA and it is equal to 1.9V. Based on VA = 1.9V, determine the expected value of V₂. +1 -3 V AVD -0.4 3-V 3-2V0 I VA=1.9V 041 VA to calculate VA. 2.2 ΚΩ +10V T 100 Ω NMOSFET VB Ins=4.05m
Consider an abrupt p-n diode with Na = 1018 cm 3 and Nd = 1016 cm³. a)Calculate the junction capacitance at zero bias. The diode area equals 10-4 cm?. Repeat the problem while treating the diode as a one-sided diode and calculate the relative error.