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- Q1) a)Explain how doping a pure silicon crystal with donor impurity atoms makes more charge carriers available for conduction.b)Does the above doping result in a p-type or n-type semiconductor? Explain your answer. c) When the diode is forward biased:i) What happens to the barrier potential?ii) What happens to the depletion region?iii) Indicate on your diagram the directions in which the holes and electrons moveB/ The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 x 10-4 s/m. Find the barrier potential at 300°K, if the Hn = 2.4µp?A silicon diode described by the Shockley equation has n = 2 and operates at 150° C with a current of 1 mA and voltage of 0.25 V. Part A Determine the current after the voltage is increased to 0.32 V. Express your answer to three significant figures and include the appropriate units. HA ? ip = Value Units
- The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?3. In the following circuits, given source voltage Vs=9V, R1, R2 and R3 all are 1kOhms. Answer the questions by considering the diodes as ideal and practical silicon ones respectively. Vs Vs Vs R2 R2 R2 Vout P D R1 R1 R3 R1 (a) Vout = ? (b) Vp = ? (c) Vp = ? Note: Vp means the voltage at point p. wQ3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? H, = 2505 nį = 1.5 x 1010cm-3 cm-2 and V.S (Ans. 2.25 x 103 cm-3, 0.252.cm).
- Draw the characteristics of Ideal and practical diodes. A semiconductor has electron and hole mobilities as Hn = 7500 cm³ /V. sec, Hp = n = 3.6 x 1012 cm-3. Find (i) The hole concentration when conductivity is minimum. (ii) The minimum conductivity. 300 cm /V.sec andHow many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductorA silicon diode described by the Shockley equation has n = 2 and operates at 150° C with a current of 1 mA and voltage of 0.25 V. ▼ Part A Determine the current after the voltage is increased to 0.37 V. Express your answer to three significant figures and include the appropriate units. μA ip = Value Units ?
- 1. You are to design a diode clipper circuit that will keep high voltage spikes from a 'noisy power supply from reaching sensitive electronics. A conventional silicon diode is used as part of the design. The clipper circuit is to be designed so that voltages 2 Resistor 10 volts are 'clipped'. SI Diode Vin from noisy Vout to electronics a) What would a suitable Zener breakdown voltage be? source Zener Diode b) From the manufacturer's specifications sheet, what would be a good choice for the Zener diode (i.e. what part number? 1Nxxx)? Why? c) If you want to 'clip' voltages that are s-10 volts as well, show how you would modify the circuit.Please make a concept map of the covalent link theme for semiconductors with the following subtopics, you can add tables, graphs, images, or things you think are relevant 1.5 Driving process 1.5.0 Introduction 1.5.1 Mobility 1.5.2 Relationships between carrier equilibrium concentrations 1.5.3 Detailed balance principle 1.5.4 Carrier equilibrium concentrations in homogeneous semiconductors 1.5.5 Conductivity 1.5.6 Hall EffectIn the figure given we have u(t)=10- cosot [V]. We assume the diodes and the A-meter (A) to be ideal. a) Plot the waveform of the current flowing through the A-m in scale. A u(t) b) What is the reading of the A-m, if it is moving-coil type? R1 R2 c) What is the reading of the A-m, if it is moving-iron type? 50 102 d) Calculate the power factor of the WHOLE structure.