1. The following data is available for an undoped semiconductor: n; = 1010 /cc, T = 300 K, N. = 3 x 109 /cc , and Ny = 2.5 x 101º /cc, mẹ =9.1 x 1032 Kg. Determine: (a) The effective mass of the holes in the valance band, (b) the energy gap of the semiconductor, (c) the Fermi level relative to the conduction band in eV. (d) the thermal velocity of holes.
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- Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given byConsider the energy gap of a silicon-based semiconductor at 0°K to be 1.21 eV and the material constant of silicon as 3.6 x 10-4. The energy gap at 30°K temperature will be (in eV).Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AThe applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.A silicon semiconductor material at T = 300 K is doped with arsenic atoms to a concentration of 2*10 ^15 cm -3 and with boron atoms to a concentration of 1.2*10 ^15 cm -3 . (a) Is the material n type or p type? (b) Determine n0 and p0 . (c) Additional boron atoms are to be added such that the hole concentration is 4*10 15 cm -3 . What concentration of boron atoms must be added and what is the new value of n0? Please answer in typing format
- A single crystal intrinsic semiconductor is at a temperature of 300K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level by7. The electron concentration in silicon at T = 300 K is n 300 K is n = 5 x 10¹ cm³. a. Is this a n-type or p-type silicon? b. Determine the position of the Fermi level with respect to the intrinsic Fermi level.Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I=26mA.given the mean life time of hole is 20uS at T-300K
- Figure shows the parabolic E versus k relationship in the conduction band for an electron in two particular semiconductor materials. Determine the effective mass (in unit of the free electron mass) of the two electrons. E (eV)4 0.5 0.05 A -0.08 0.08 k (Å-1)Given an n-type silicon at 300K that is doped with 1015 cm-3 As atoms. Upon the application of a light source, the excess carriers generated is 1013 cm3. Calculate (a) the Fermi energy level and (b) the quasi Fermi energy levels.6V ol The output signal given above is taken from a circuit with the frequency of the input signal 100 Hz, the capacity of the capacitor used is 4µF, and the value of the ripple factor is 1.21. Answer the following questions using the ones given. The diodes used are silicon diodes, their operating voltages are 0.7 volts, and can be omitted because their resistance is very small. a) draw a graph showing how the output voltage would have been if the capacitor had not been used in this circuit