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3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier egz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or-V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current I from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.

3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier egz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or-V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current I from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
Transcribed Image Text:3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
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